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| BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com * Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Emitter Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Symbol VCEO Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V 2 EMITTER Collector-Base Voltage VCBO V 1 V mAdc 2 3 SOT-23 CASE 318 STYLE 6 Emitter-Base Voltage Collector Current - Continuous VEBO IC Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit 1 xxM 2 xx = Device Code M = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. (c) Semiconductor Components Industries, LLC, 2004 1 June, 2004 - Rev. 8 Publication Order Number: BC856ALT1/D BC856ALT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mA) Collector -Emitter Breakdown Voltage (IC = -10 mA, VEB = 0) Collector -Base Breakdown Voltage (IC = -10 mA) Emitter -Base Breakdown Voltage (IE = -1.0 mA) BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857A, BC857B Only BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO -65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 - - - - - - - - - - - - - - - - - - - - - - - - - - - - -15 -4.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C ICBO nA mA hFE - - - 125 220 420 90 150 270 180 290 520 - - -0.7 -0.9 - - - - - 250 475 800 - (IC = -2.0 mA, VCE = -5.0 V) Collector -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base -Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series VCE(sat) - - VBE(sat) - - VBE(on) -0.6 - -0.75 -0.82 - - -0.3 -0.65 V V V fT Cob NF 100 - - - - 4.5 MHz pF dB - - - - 10 4.0 http://onsemi.com 2 BC856ALT1 Series BC857/BC858/BC859 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 0.3 Figure 1. Normalized DC Current Gain Figure 2. "Saturation" and "On" Voltages VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) -2.0 TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -0.8 -0.4 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 4. Base-Emitter Temperature Coefficient 10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C 400 300 200 150 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VCE = -10 V TA = 25C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 BC856ALT1 Series BC856 -1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TJ = 25C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 7. DC Current Gain Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VB, TEMPERATURE COEFFICIENT (mV/ C) -2.0 -1.0 -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.4 -1.2 -1.8 qVB for VBE -55C to 125C -0.8 -2.2 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -2.6 -3.0 -0.2 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25C C, CAPACITANCE (pF) 20 Cib 500 VCE = -5.0 V 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 BC856ALT1 Series 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) ZqJC(t) = r(t) RqJC RqJC = 83.3C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 500 1.0 k 2.0 k 5.0 k 10 k 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25C TJ = 25C 3 ms -10 -5.0 -2.0 -1.0 BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856ALT1 Series ORDERING INFORMATION Device BC856ALT1 BC856ALT3 BC856BLT1 BC856BLT1G BC856BLT3 BC857ALT1 BC857BLT1 BC857BLT3 BC857BLT3G BC857CLT1 BC857CLT1G BC858ALT1 BC858ALT1G BC858BLT1 BC858BLT1G BC858BLT3 BC858CLT1 BC858CLT1G BC858CLT3 BC858CLT3G BC859BLT1 BC859BLT3 BC859CLT1 BC859CLT3 Marking 3A 3A 3B 3B 3B 3E 3F 3F 3F 3G 3G 3J 3J 3K 3K 3L 3L 3L 3L 3L 4B 4B 4C 4C Package SOT-23 SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 SOT-23 SOT-23 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel Shipping 3,000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BC856ALT1 Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-09 ISSUE AI A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. 2 3 1 B S DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 BC856ALT1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 BC856ALT1/D |
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